suface mount package. s mhop microelectronics c orp. a STF1016C symbol v ds v gs i dm 65 w a p d c 62.5 -55 to 150 i d units parameter 100 8 160 c/w v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) typ 100v 40a 17 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous c -pulsed a c a maximum power dissipation operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja www.samhop.com.tw jul,21,2015 1 details are subject to change without notice. t a =25 c t a =25 c w green product 1.92 n-channel enhancement mode field effect transistor 4 3 2 1 d d d d g s s 5 6 7 8 s ver 1.0 196 e as single pulse avalanche energy e mj 40 t c =25 c t c =100 c a 25.3 a 2c/w thermal resistance, junction-to-case r jc d f n 3 . 3 x 3 . 3 p i n 1 (bottom view) g s s s d d d d 19 @ vgs=4.5v d
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) 1 v m ohm v gs =10v , i d =20a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics STF1016C 2 3 g fs 71 s c iss 2568 pf c oss 190 pf c rss 158 pf q g 48 nc 53 nc q gs 115 nc q gd 24 t d(on) 42 ns t r 4 ns t d(off) 12 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =50v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =20a input capacitance output capacitance dynamic characteristics forward transconductance reverse transfer capacitance v gs =4.5v , i d =19a m ohm b f=1.0mhz b v ds =50v,i d =5a, v gs =10v drain-source diode characteristics and maximum ratings v sd diode forward voltage v gs =0v,i s =8a 0.77 1.2 v www.samhop.com.tw jul,21,2015 2 17 19.5 19 23 ver 1.0 v ds =50v,i d =5a,v gs =10v d notes a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.pulse test:pulse width < 1us, duty cycle < 1%. e.starting t j =25 c,l=0.5mh,vdd = 50v.(see figure13) f.mounted on fr4 board of 1 inch 2 , 2oz. _ _
STF1016C ver 1.0 www.samhop.com.tw jul,21,2015 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 70 56 42 28 0 0 0.5 1.0 1.5 2.0 2.5 3.0 12 6 0 0 0.8 4.8 4.0 3.2 2.4 1.6 -55 c 54 45 36 27 18 9 1 2.2 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 14 v gs =10v v gs =4.5v 2.0 v gs =10v i d =20a v gs =10v 70 56 42 28 14 0.1 v ds =v gs i d =250ua v gs =4.5v 25 c tj=125 c v gs =3v v gs =3.5v v gs =4v 18 24 30 v gs =4.5v i d =19a
STF1016C ver 1.0 www.samhop.com.tw jul,21,2015 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 60 50 40 30 20 10 0 2468 10 0 10 1 00.2 20 1.0 0.4 0.6 0.8 3000 2500 2000 1500 1000 500 0 10 15 20 25 30 10 8 6 4 2 0 01632 8 24 40 48 125 c i d =20a ciss coss crss 1 10 100 1 10 100 0 5 td(off ) vds=50v,id=1a vgs=10v tf v ds =50v i d =5a 25 c 125 c 0.1 1 10 100 10 1 100u s 1 0us dc 100 td(on) 25 c 75 c 0.1 r d s ( on) l im it v gs =10v t c =25 c single pulse tr 1000 1m s 75 c
STF1016C ver 1.0 www.samhop.com.tw jul,21,2015 5 t p v (br )dss i as f igure 13b. o fr m w a ve s u nc l am p ed i n d u ct i ve f igure 13a. u nc l am p e d s in d u ct i ve t e t ci r c u i t r g i as 0.01 t p d.u.t l v ds + - dd 20v v normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 0.01 0.1 1 single pulse 0.00001 1000 100 10 1 0.1 0.01 0.001 0.0001 p dm 1. r thj c (t)=r (t) * r jc 2. r jc =s ee datasheet 3. t jm- t c =p dm *r jc (t) 4. duty cycle, d=t 1 /t 2 th th th t 1 t 2 0.02 0.01 0.5 0.2 0.1 0.05
STF1016C www.samhop.com.tw jul,21,2015 6 package outline dimensions ver 1.0 dfn 3.3 x 3.3 symbols millimeters a a1 a3 b d d2 e e2 e g min. nom. max. 0.70 0.75 0.10 0.15 0.24 0.30 3.15 3.30 2.10 2.25 3.30 2.15 2.25 0.60 0.65 0.80 0.05 0.25 0.35 3.40 2.35 2.35 0.70 l 0.475 0.525 0.575 d e top view e2 g e l d2 bottom view a3 b a a1 side view 3.15 3.40 0.35 0.40 0.45
ver 1.0 www.samhop.com.tw jul,21,2015 7 STF1016C dfn 3.3 x 3.3 tape and reel data dfn 3.3 x 3.3 tape dfn 3.3 x 3.3 reel unit : mm feeding direction h1 t k h section a-a section b-b d1 p2 p1 e d b b p e1 a a dfn 3.3x3.3 package h1 d d1 e e1 hp p1 p2 t k 3.60 2 0.10 ? 1.50 (min) ? 1.50 +0.10 - 0.00 1.05 2 0.10 4.0 2 0.10 2.0 2 0.05 0.3 2 0.05 12.0 +0.30 - 0.10 1.75 2 0.10 8.0 2 0.10 3.60 2 0.10 a n w3 w1 w b c tape size anww1w3bc 12 mm unit : mm 330 2 2.0 101.6 2 2.0 1.3 + -0.0 12.4 +2.0 -0.0 12.4 +3.0 -0.0 1.7 -2.6 13.2 +3.0 -0.2
top marking definition dfn 3.3 x 3.3 1016c xxxxxx product no. wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. pin 1 STF1016C www.samhop.com.tw jul,21,2015 8 ver 1.0
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